Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 7A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Rise Time | 71ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 38 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 4.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.023Ohm |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 14A |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |