NTMS7N03R2G
| Parameters | |
|---|---|
| Power Dissipation-Max | 800mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Rise Time | 71ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 7mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.023Ohm |
| Factory Lead Time | 1 Week |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
See Relate Datesheet
