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NTNUS3171PZT5G

MOSFET T1 20V P-CH SOT-1123


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTNUS3171PZT5G
  • Package: SOT-1123
  • Datasheet: PDF
  • Stock: 615
  • Description: MOSFET T1 20V P-CH SOT-1123 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-1123
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 125mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation -200mW
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 15V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Rise Time 56ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 145 ns
Turn-Off Delay Time 196 ns
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Height 400μm
Length 850μm
Width 650μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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