Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 125mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | -200mW |
Turn On Delay Time | 30 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.5 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 150mA Ta |
Rise Time | 56ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 145 ns |
Turn-Off Delay Time | 196 ns |
Continuous Drain Current (ID) | 150mA |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -20V |
Height | 400μm |
Length | 850μm |
Width | 650μm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |