Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.29.00.95 |
Subcategory | FET General Purpose Powers |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 27A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 88.2W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 48m Ω @ 13.5A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 27A Ta |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±15V |
Continuous Drain Current (ID) | 27A |
JEDEC-95 Code | TO-220AB |
Drain-source On Resistance-Max | 0.048Ohm |
Pulsed Drain Current-Max (IDM) | 80A |
Avalanche Energy Rating (Eas) | 94 mJ |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |