Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 5.4W Ta 254W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 167W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.5m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 32V |
Current - Continuous Drain (Id) @ 25°C | 24A Ta 167A Tc |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Rise Time | 65ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 85 ns |
Turn-Off Delay Time | 85 ns |
Continuous Drain Current (ID) | 136A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0045Ohm |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 258A |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |