Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 25V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 75A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 1.25W Ta 74.4W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 74.4W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1333pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 9.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 5V |
Rise Time | 1.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 18.4 ns |
Continuous Drain Current (ID) | 9.7A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 225A |
Avalanche Energy Rating (Eas) | 71.7 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |