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NTP90N02

MOSFET N-CH 24V 90A TO220AB


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTP90N02
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 982
  • Description: MOSFET N-CH 24V 90A TO220AB (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 90A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 20V
Current - Continuous Drain (Id) @ 25°C 90A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 90A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0058Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 733 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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