NTQS6463R2
| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Drain Current-Max (Abs) (ID) | 5.5A |
| Drain-source On Resistance-Max | 0.02Ohm |
| DS Breakdown Voltage-Min | 20V |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | TIN LEAD |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 930mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 6.8A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 6.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 5V |
See Relate Datesheet
