Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -400mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 225mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 225mW |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 800m Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 400mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.18nC @ 10V |
Rise Time | 6ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 400mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.4A |
Drain-source On Resistance-Max | 0.8Ohm |
Drain to Source Breakdown Voltage | -20V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |