Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 148MOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -1A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 400mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 400mW |
Turn On Delay Time | 7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 9 ns |
Continuous Drain Current (ID) | 1A |
Threshold Voltage | -1.9V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | -20V |
Nominal Vgs | -1.9 V |
Height | 940μm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |