Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | ULTRA LOW RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 470mW Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 4.5V |
Rise Time | 14ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 4.67 μs |
Turn-Off Delay Time | 420 ns |
Continuous Drain Current (ID) | 3.6A |
Gate to Source Voltage (Vgs) | 8V |
Drain-source On Resistance-Max | 0.024Ohm |
DS Breakdown Voltage-Min | 20V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |