Parameters | |
---|---|
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 75m Ω @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 2.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 15.6nC @ 10V |
Rise Time | 16ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | -2.2A |
Threshold Voltage | -1.15V |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | -30V |
Nominal Vgs | -1.15 V |
Height | 1.01mm |
Length | 3.04mm |
Width | 1.4mm |
Factory Lead Time | 1 Week |
Radiation Hardening | No |
Lifecycle Status | ACTIVE (Last Updated: 18 hours ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
REACH SVHC | No SVHC |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
RoHS Status | ROHS3 Compliant |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Lead Free | Lead Free |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 75MOhm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 480mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.25W |
Turn On Delay Time | 9 ns |