Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Rise Time | 12ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 1.13A |
Gate to Source Voltage (Vgs) | -20V |
Drain-source On Resistance-Max | 0.2Ohm |
Drain to Source Breakdown Voltage | -30V |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn80Pb20) |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -1.95A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 400mW Tj |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.25W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 200m Ω @ 1.95A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.13A Ta |