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NTR5103NT1G

NTR5103NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTR5103NT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 126
  • Description: NTR5103NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 1.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
Rise Time 1.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±30V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 4.8 ns
Continuous Drain Current (ID) 260mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.26A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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