Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 290mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350mW |
Turn On Delay Time | 7.7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 150m Ω @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 10V |
Rise Time | 6.7ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 7.1 ns |
Turn-Off Delay Time | 19.9 ns |
Continuous Drain Current (ID) | -1.2A |
Threshold Voltage | -1.15V |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | -30V |
Nominal Vgs | -1.15 V |
Height | 900μm |
Length | 2.2mm |
Width | 1.35mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |