Parameters | |
---|---|
Element Configuration | Single |
Power Dissipation | 2.2W |
Turn On Delay Time | 12 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 6.7m Ω @ 12A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 4.5V |
Rise Time | 56ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 165 ns |
Turn-Off Delay Time | 250 ns |
Continuous Drain Current (ID) | 9A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 22A |
Drain to Source Breakdown Voltage | -20V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Surface Mount | YES |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Pin Count | 8 |
Power Dissipation-Max | 840mW Ta |