Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 8 |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 660mW Ta 46.3W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.1W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2363pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 8.3A Ta 69A Tc |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 11.5V |
Rise Time | 38ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5.5 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 20.6A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 69A |
Drain-source On Resistance-Max | 0.0075Ohm |
Drain to Source Breakdown Voltage | 30V |
Nominal Vgs | 1.9 V |
Feedback Cap-Max (Crss) | 255 pF |
Height | 750μm |
Length | 3.15mm |
Width | 3.15mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |