Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 8 |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Power Dissipation-Max | 790mW Ta 20.2W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.06W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 23m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 476pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Ta 23A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
Rise Time | 26.6ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.6 ns |
Continuous Drain Current (ID) | 9.6A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 7.2A |
Drain-source On Resistance-Max | 0.03Ohm |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 45A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |