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NTTFS4930NTAG

Single N-Channel Power MOSFET 30V, 23A, 23mO


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTTFS4930NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 633
  • Description: Single N-Channel Power MOSFET 30V, 23A, 23mO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 790mW Ta 20.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.06W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 476pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta 23A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 26.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 9.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.2A
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 45A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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