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NTTFS4985NFTAG

MOSFET


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTTFS4985NFTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 591
  • Description: MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 1.47W Ta 22.73W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.69W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16.3A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs 29.4nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16.3A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 192A
Avalanche Energy Rating (Eas) 52 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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