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NTTFS4985NFTWG

MOSFET N-CH 30V 64A U8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTTFS4985NFTWG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 549
  • Description: MOSFET N-CH 30V 64A U8FL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.47W Ta 22.73W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16.3A Ta 64A Tc
Gate Charge (Qg) (Max) @ Vgs 29.4nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16.3A
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 192A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 52 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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