NTTFS5116PLTWG
| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-F5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.2W Ta 40W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 40W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 52m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1258pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 58ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 37 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 5.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain-source On Resistance-Max | 0.072Ohm |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 76A |
| Avalanche Energy Rating (Eas) | 45 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
See Relate Datesheet
