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NTZS3151PT1H

MOSFET PFET SOT563 20V 950MA TR


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTZS3151PT1H
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 390
  • Description: MOSFET PFET SOT563 20V 950MA TR (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 23.7 ns
Continuous Drain Current (ID) 860mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 170mW Ta
Element Configuration Single
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 458pF @ 16V
Current - Continuous Drain (Id) @ 25°C 860mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 18 ns
See Relate Datesheet

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