NVB25P06T4G
| Parameters | |
|---|---|
| Rise Time | 72ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 190 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 27.5A |
| Gate to Source Voltage (Vgs) | 15V |
| Drain-source On Resistance-Max | 0.082Ohm |
| Pulsed Drain Current-Max (IDM) | 80A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 600 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 120W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 82m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 27.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
See Relate Datesheet
