NVB5404NT4G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | LIFETIME (Last Updated: 1 week ago) |
| Package / Case | D2PAK |
| Surface Mount | YES |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 5.4W |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 5.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| Transistor Application | SWITCHING |
| Rise Time | 65ns |
| Drain to Source Voltage (Vdss) | 40V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 85 ns |
| Turn-Off Delay Time | 85 ns |
| Continuous Drain Current (ID) | 24A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0045Ohm |
| Pulsed Drain Current-Max (IDM) | 670A |
| Input Capacitance | 7nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Rds On Max | 4.5 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
