Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 157 ns |
Turn-Off Delay Time | 107 ns |
Continuous Drain Current (ID) | 77A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.014Ohm |
Pulsed Drain Current-Max (IDM) | 285A |
DS Breakdown Voltage-Min | 100V |
Avalanche Energy Rating (Eas) | 470 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 3 |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 217W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14m Ω @ 72A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 77A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Rise Time | 144ns |
Drain to Source Voltage (Vdss) | 100V |