Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 1.7A |
Drain-source On Resistance-Max | 0.25Ohm |
DS Breakdown Voltage-Min | 60V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.2W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 262pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |