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NVD4815NT4G

MOSFET N-CH 30V 6.9A DPAK-4


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVD4815NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 824
  • Description: MOSFET N-CH 30V 6.9A DPAK-4 (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.26W Ta 32.6W Tc
Element Configuration Single
Power Dissipation 1.92W
Turn On Delay Time 10.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Rise Time 21.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 8.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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