Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 4 |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 40W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 40W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 33A Tc |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 33A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.019Ohm |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 67A |
Avalanche Energy Rating (Eas) | 39 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |