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NVD5890NT4G

MOSFET N-CH 40V 100A DPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVD5890NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 312
  • Description: MOSFET N-CH 40V 100A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Ta 123A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 52ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 123A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 240 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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