NVD5C648NLT4G
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 3.1W Ta 72W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.1m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18A Ta 89A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 |
| Terminal Finish | Tin (Sn) |
See Relate Datesheet
