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NVD6820NLT4G

Trans MOSFET N-CH 90V 10A Automotive 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVD6820NLT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 227
  • Description: Trans MOSFET N-CH 90V 10A Automotive 3-Pin(2+Tab) DPAK T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4W Ta 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4209pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 98ns
Drain to Source Voltage (Vdss) 90V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0205Ohm
DS Breakdown Voltage-Min 90V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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