Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 4W Ta 100W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 16.7m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4209pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 10A Ta 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Rise Time | 98ns |
Drain to Source Voltage (Vdss) | 90V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 59 ns |
Turn-Off Delay Time | 36 ns |
Continuous Drain Current (ID) | 10A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 50A |
Drain-source On Resistance-Max | 0.0205Ohm |
DS Breakdown Voltage-Min | 90V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |