Parameters | |
---|---|
Vgs (Max) | ±20V |
Fall Time (Typ) | 42 ns |
Turn-Off Delay Time | 31 ns |
Continuous Drain Current (ID) | 8.5A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Avalanche Energy Rating (Eas) | 80 mJ |
Max Junction Temperature (Tj) | 175°C |
Height | 2.51mm |
Length | 6.73mm |
Width | 6.22mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.9W Ta 90W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.9W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 20m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3468pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8.5A Ta 41A Tc |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Rise Time | 55ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |