NVF2955T1G
| Parameters | |
|---|---|
| Number of Pins | 4 |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Weight | 250.212891mg |
| Vgs (Max) | ±20V |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 65 ns |
| Packaging | Tape & Reel (TR) |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Published | 2008 |
| Drain to Source Breakdown Voltage | -60V |
| Series | Automotive, AEC-Q101 |
| Avalanche Energy Rating (Eas) | 225 mJ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Height | 1.65mm |
| Part Status | Active |
| Length | 6.7mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Width | 3.7mm |
| Number of Terminations | 4 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Lead Free | Lead Free |
| Resistance | 170MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Factory Lead Time | 1 Week |
| Input Capacitance (Ciss) (Max) @ Vds | 492pF @ 25V |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
| Package / Case | TO-261-4, TO-261AA |
| Rise Time | 7.6ns |
| Surface Mount | YES |
See Relate Datesheet
