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NVMFS4841NT1G

MOSFET Single N-Channel 30V,89A,7mOhm


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVMFS4841NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 646
  • Description: MOSFET Single N-Channel 30V,89A,7mOhm (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 3.7W Ta 112W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 112W
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1436pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 66.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 15.5 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 89A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 336A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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