Parameters | |
---|---|
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.84W Ta 161W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 0.9m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 10144pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 49A Ta 319A Tc |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 319A |
Drain-source On Resistance-Max | 0.00095Ohm |
Pulsed Drain Current-Max (IDM) | 900A |
DS Breakdown Voltage-Min | 30V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Reach Compliance Code | not_compliant |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PDSO-F5 |