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NVMFS5834NLWFT3G

Power MOSFET 40V, 75A, 9.3 mOhm, Single N-Channel, SO8-FL, Logic Level.


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVMFS5834NLWFT3G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 666
  • Description: Power MOSFET 40V, 75A, 9.3 mOhm, Single N-Channel, SO8-FL, Logic Level. (Kg)

Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 276A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 48 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1231pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 56.4ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet

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