Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.8W Ta 200W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 4.2m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 7400pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta 140A Tc |
Gate Charge (Qg) (Max) @ Vgs | 136nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 140A |
Drain-source On Resistance-Max | 7.2Ohm |
Pulsed Drain Current-Max (IDM) | 560A |
DS Breakdown Voltage-Min | 40V |
Avalanche Energy Rating (Eas) | 420 mJ |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |