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NVMFS5C430NLAFT1G

NVMFS5C430NLAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVMFS5C430NLAFT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 336
  • Description: NVMFS5C430NLAFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 hours ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V
Current - Continuous Drain (Id) @ 25°C 38A Ta 200A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0022Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 493 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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