NVMFS5C673NLWFAFT1G
| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 290A |
| Avalanche Energy Rating (Eas) | 88 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1.1mm |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 46W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 9.2m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 35μA |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 14A |
See Relate Datesheet
