NVR1P02T1G
| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 1A |
| Operating Temperature | -55°C~150°C TJ |
| Drain to Source Breakdown Voltage | -20V |
| Height | 1.01mm |
| Length | 3.04mm |
| Packaging | Tape & Reel (TR) |
| Width | 1.4mm |
| Published | 2012 |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 400mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 400mW |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| Factory Lead Time | 1 Week |
| Rise Time | 9ns |
| Lifecycle Status | ACTIVE (Last Updated: 12 hours ago) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Fall Time (Typ) | 3 ns |
| Surface Mount | YES |
| Turn-Off Delay Time | 9 ns |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 1A |
| Gate to Source Voltage (Vgs) | 20V |
| Transistor Element Material | SILICON |
See Relate Datesheet
