NVTFS4C05NWFTAG
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1988pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta 102A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 102A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.0051Ohm |
| Pulsed Drain Current-Max (IDM) | 433A |
| DS Breakdown Voltage-Min | 30V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Reach Compliance Code | not_compliant |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.2W Ta 68W Tc |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
See Relate Datesheet
