Parameters | |
---|---|
Case Connection | DRAIN |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 5.9m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1113pF @ 15V |
Package / Case | 8-PowerWDFN |
Current - Continuous Drain (Id) @ 25°C | 17A Ta |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Gate Charge (Qg) (Max) @ Vgs | 18.2nC @ 10V |
Operating Temperature | -55°C~175°C TJ |
Drain to Source Voltage (Vdss) | 30V |
Packaging | Tape & Reel (TR) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Published | 2014 |
JESD-609 Code | e3 |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 17A |
Pbfree Code | yes |
Gate to Source Voltage (Vgs) | 20V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain Current-Max (Abs) (ID) | 55A |
Number of Terminations | 5 |
Drain-source On Resistance-Max | 0.0059Ohm |
ECCN Code | EAR99 |
Pulsed Drain Current-Max (IDM) | 253A |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
DS Breakdown Voltage-Min | 30V |
Technology | MOSFET (Metal Oxide) |
Avalanche Energy Rating (Eas) | 20 mJ |
Terminal Position | DUAL |
RoHS Status | ROHS3 Compliant |
Terminal Form | FLAT |
Lead Free | Lead Free |
Reach Compliance Code | not_compliant |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.1W Ta 31W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 31W |