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NVTFS4C10NTAG

MOSFET NFET U8FL 30V 44A 7.4MOHM


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVTFS4C10NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 759
  • Description: MOSFET NFET U8FL 30V 44A 7.4MOHM (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3W Ta 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 993pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15.3A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs 19.3nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 15.3A
Drain-source On Resistance-Max 0.0074Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 196A
Avalanche Energy Rating (Eas) 26 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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