Parameters | |
---|---|
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 7.6A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 20A |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 850pF |
Avalanche Energy Rating (Eas) | 20 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
Drain to Source Resistance | 24mOhm |
Contact Plating | Tin |
Rds On Max | 24 mΩ |
Surface Mount | YES |
Number of Pins | 8 |
Height | 750μm |
Packaging | Tape & Reel (TR) |
Length | 3.15mm |
Published | 2009 |
JESD-609 Code | e3 |
Width | 3.15mm |
Radiation Hardening | No |
Pbfree Code | yes |
Part Status | Active |
REACH SVHC | No SVHC |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS Status | ROHS3 Compliant |
Number of Terminations | 5 |
Lead Free | Lead Free |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 3.2W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 8 |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 22W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
Halogen Free | Halogen Free |
Rise Time | 29ns |
Drain to Source Voltage (Vdss) | 60V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 21 ns |