Parameters | |
---|---|
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 24m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Rise Time | 29ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Surface Mount | YES |
Number of Pins | 8 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Pin Count | 8 |
Number of Channels | 1 |
Power Dissipation-Max | 3.2W Ta 22W Tc |
Element Configuration | Single |
Turn On Delay Time | 9 ns |