Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 20W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 20μA |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 26A Tc |
Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain-source On Resistance-Max | 0.025Ohm |
Pulsed Drain Current-Max (IDM) | 104A |
DS Breakdown Voltage-Min | 40V |
Avalanche Energy Rating (Eas) | 43 mJ |
RoHS Status | ROHS3 Compliant |