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NVTFS5C658NLWFTAG

NVTFS5C658NLWFTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVTFS5C658NLWFTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 350
  • Description: NVTFS5C658NLWFTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 114W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1935pF @ 25V
Current - Continuous Drain (Id) @ 25°C 109A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 18A
Drain-source On Resistance-Max 0.073Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 142 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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