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NVTFS6H888NTAG

T8 80V U8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NVTFS6H888NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 949
  • Description: T8 80V U8FL (Kg)

Details

Tags

Parameters
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.9W Ta 18W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 15μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 40V
Current - Continuous Drain (Id) @ 25°C 4.7A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4.7A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 47A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 47 mJ
RoHS Status Non-RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet

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