NVTR01P02LT1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 400mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 400mW |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 750mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 1.3A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.22Ohm |
| DS Breakdown Voltage-Min | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
