Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Terminal Form | GULL WING |
Pin Count | 6 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-G6 |
Number of Elements | 2 |
Number of Channels | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 445mW |
Turn On Delay Time | 15 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.4 Ω @ 350mA, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Turn-Off Delay Time | 69 ns |
Continuous Drain Current (ID) | 350mA |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.35A |
Drain to Source Breakdown Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Ambient Temperature Range High | 150°C |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |